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| DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D050 BA423A AM band-switching diode Product specification Supersedes data of March 1982 1996 Mar 13 Philips Semiconductors Product specification AM band-switching diode FEATURES * Continuous reverse voltage: max. 20 V * Continuous forward current: max. 50 mA * Low diode capacitance: max. 2.5 pF * Low diode forward resistance: max. 1.2 . APPLICATION * Band switching in AM radio receivers. The diodes are type branded. BA423A DESCRIPTION Planar band-switching diode in a hermetically sealed glass SOD68 (DO-34) package. k handbook, halfpage a MAM156 Fig.1 Simplified outline (SOD68; DO-34) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VR IF Tstg Tj continuous reverse voltage continuous forward current storage temperature junction temperature PARAMETER MIN. - - -65 - MAX. 20 50 +150 150 V mA C C UNIT ELECTRICAL CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL VF IR PARAMETER forward voltage reverse current see Fig.3 VR = 20V VR = 20 V; Tj = 125 C Cd rD diode capacitance diode forward resistance f = 1 MHz; VR = 3 V; see Fig.4 IF = 10 mA; f = 1 MHz; see Fig.5 100 5 2.5 1.2 nA A pF CONDITIONS IF = 50 mA; see Fig.2 MAX. 0.9 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note 1. Device mounted on a FR4 printed-circuit board without metallization pad. PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient CONDITIONS lead length 10 mm lead length 10 mm; note 1 VALUE 240 500 UNIT K/W K/W 1996 Mar 13 2 Philips Semiconductors Product specification AM band-switching diode GRAPHICAL DATA MBG292 BA423A handbook, halfpage (1) (2) (3) 100 10 4 handbook, halfpage IR (nA) 10 3 MBG291 IF (mA) 50 10 2 10 0 0 0.5 1 V F (V) 1.5 1 0 50 100 Tj ( o C) 150 (1) Tj = 125 C; typical values. (2) Tj = 25 C; typical values. (3) Tj = 25 C; maximum values. VR = 20 V. Solid line: maximum values. Dotted line: typical values. Fig.2 Forward current as a function of forward voltage. Fig.3 Reverse current as a function of junction temperature. handbook, halfpage 4 MBG293 handbook, halfpage 4 MBG294 Cd (pF) 3 rD () 3 2 2 1 1 0 0 4 8 12 V (V) 16 R 0 0 4 8 12 I (mA) 16 F f = 1 MHz; Tj = 25 C. f = 1 MHz; Tj = 25 C. Fig.4 Diode capacitance as a function of reverse voltage; typical values. Fig.5 Diode forward resistance as a function of forward current; typical values. 1996 Mar 13 3 Philips Semiconductors Product specification AM band-switching diode PACKAGE OUTLINE BA423A handbook, full pagewidth 0.55 max 1.6 max 25.4 min 3.04 max 25.4 min MSA212 - 1 Dimensions in mm. The marking band indicates the cathode. Fig.6 SOD68; DO-34. DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. 1996 Mar 13 4 |
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